In the following sections 2-4 experimental details, results and discussion and conclusion of the present study have been described, respectively. Clear evidences of 4H-SiC growth are found in with the help of various diagnostic techniques. In this paper, we have grown 4H-SiC in thermal evaporation reactor a mixture of carbon (fullerene C 60) and silicon powder was pressed into hard pellet in 1:1 by weight ratio and was evaporated using molybdenum (Mo) boat in the thermal evaporation system. To the best of our knowledge no detail study has been reported in literature on the growth and characterization of 4H-SiC by thermal evaporation technique. On other hand thermal evaporation technique for the growth of SiC is simple, cost effective and promises to bring economical manufacturing in electronic industry for affordable devices. 8–12 All these techniques are much expensive and the commercialization of 4H-SiC based devices are not yet to be common. 5–7 Although several reports are found for the growth of 4H-SiC on Si substrate using diverse techniques such as chemical vapor deposition, molecular beam epitaxy, sputtering and etc. Moreover, 4H-SiC is high breakdown electric field, high thermal conductivity and wide band gap of 3.2 eV at room temperature. 1–4 SiC has more than 200 poly types and among of them 4H-SiC is the most interesting one for power electronic applications. WebThe lattice constant of 3C-SiC crystal structure optimized based on. SiC is a material of great importance because of its potential applications in high power, high frequency and high electric fields electronic devices due to its amazing structural, optical, electrical properties, high process temperature and chemical stability. 3c lattices questions Accurate values of 3C, 2H, 4H, and 6H SiC elastic constants.
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